inchange semiconductor isc product specification isc silicon npn power transistor BUL1203E description high voltage high speed switching applications electronic ballasts for fluorescent lighting absolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector-base voltage 1200 v v ces collector-emitter voltage v be = 0 1200 v v ceo collector-emitter voltage 550 v v ebo emitter-base voltage 9 v i c collector current-continuous 5 a i cm collector current-peak 8 a i b b base current 2 a i bm base current-peak 4 a p c collector power dissipation @t c =25 100 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.25 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUL1203E electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.1a; i b = 0, l= 25mh 550 v v ce( sat )-1 collector-emitter saturation voltage i c = 1a; i b = 0.2a b 0.5 v v ce( sat )-2 collector-emitter saturation voltage i c = 2a; i b = 0.4a b 0.7 v v ce( sat )-3 collector-emitter saturation voltage i c = 3a; i b = 1a b 1.5 v v be( sat )-1 base-emitter saturation voltage i c = 2a; i b = 0.4a b 1.5 v v be( sat )-2 base-emitter saturation voltage i c = 3a; i b = 1a b 1.5 v i ces collector cutoff current v ce = 1200v; v be = 0 0.1 ma i ceo collector cutoff current v ce = 550v; i b = 0 0.1 ma h fe-1 dc current gain i c = 1ma; v ce = 5v 10 h fe-2 dc current gain i c = 10ma; v ce = 5v 10 h fe-3 dc current gain i c = 0.8a; v ce = 3v 14 32 h fe-4 dc current gain i c = 2a; v ce = 5v 9 28 switching times ;resistive load t on turn-on time 0.5 s t s storage time 3.0 s t f fall time i c = 2a; i b1 = 0.4a; i b2 = -0.8a; t p = 30 s; v cc = 150v 0.3 s isc website www.iscsemi.cn
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